View IRFS7434-7PPBF-15_8216195.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

strong ir fet? irfs7434-7ppbf hexfet ? power mosfet d s g g d s gate drain source application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant base part number package type standard pack form quantity irfs7434-7ppbf d 2 pak-7pin tube 50 irfs7434-7ppbf tape and reel left 800 irfs7434trl7pp orderable part number v dss 40v r ds(on) typ. 0.70m ?? max 1.0m ?? i d (silicon limited) 362a ? i d (package limited) 240a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 350 400 i d , d r a i n c u r r e n t ( a ) limited by package 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf absolute maximium rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 362 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 229 ? i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 240 i dm pulsed drain current ?? 1300* ? p d @t c = 25c maximum power dissipation 245 w linear derating factor 1.96 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 150 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 384 ? mj e as (thermally limited) single pulse avalanche energy ?? 880 ? i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.51 c/w ? r ? ja junction-to-ambient ?? ??? 40 ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.03 ??? v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance ??? 0.7 1.0 v gs = 10v, i d = 100a ? ??? 1.5 ??? v gs = 6v, i d = 50a ? v gs(th) gate threshold voltage 2.2 3.0 3.9 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =40 v, v gs = 0v ??? ??? 150 v ds =40v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.0 ??? ?? m ??? 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014 notes: ?? calculated continuous current based on maximum allowable ju nction temperature. bond wire current limit is 240a by source bonding technology. note that current limit ations arising from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.077mh, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 969a/s, v dd ? v (br)dss , t j ?? 150c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 42a, v gs =10v. ? when mounted on 1" square pcb (fr-4 or g-10 material). please refer to an-994 for more details: http://www.irf.com/technica l-info/appnotes/an-994.pdf * pulse drain current is limited by source bonding technology.
? irfs7434-7ppbf dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 156 ??? ??? s v ds = 10v, i d =100a q g total gate charge ??? 210 315 i d = 100a q gs gate-to-source charge ??? 55 ??? v ds = 20v q gd gate-to-drain charge ??? 66 ??? v gs = 10v q sync total gate charge sync. (qg? qgd) ??? 144 ??? t d(on) turn-on delay time ??? 23 ??? ns v dd = 26v t r rise time ??? 125 ??? i d = 100a t d(off) turn-off delay time ??? 107 ??? r g = 2.6 ?? t f fall time ??? 85 ??? v gs = 10v ? c iss input capacitance ??? 10250 ??? pf ? v gs = 0v c oss output capacitance ??? 1540 ??? v ds = 25v c rss reverse transfer capacitance ??? 1060 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 1880 ??? v gs = 0v, vds = 0v to 32v ? see fig.11 c oss eff.(tr) output capacitance (time related) ??? 2147 ??? v gs = 0v, vds = 0v to 32v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 362 ? a mosfet symbol (body diode) ? showing the i sm pulsed source current ??? ??? 1300* ? integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? 0.9 1.3 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? ??? 3.0 ??? v/ns t j = 150c,i s =100a,v ds = 40v ? t rr reverse recovery time ??? 44 ??? ns t j = 25c v dd = 34v ??? 46 ??? t j = 125c i f = 100a, q rr reverse recovery charge ??? 43 ??? nc t j = 25c di/dt = 100a/s ??? ??? 44 ??? t j = 125c ? i rrm reverse recovery current ??? 1.9 ??? a t j = 25c ? nc ? d s g 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs . gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 250 300 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 100a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf fig 10. maximum safe operating area fig 11. drain-to?source breakdown voltage -5 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 e n e r g y ( j ) fig 12. typical c oss stored energy fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -60 -20 20 60 100 140 180 t j , temperature ( c ) 40 41 42 43 44 45 46 47 48 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package 0 100 200 300 400 500 i d , drain current (a) 0.0 2.0 4.0 6.0 8.0 10.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf fig 17. threshold voltage vs. temperature 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014 fig 21. typical stored charge vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 2 4 6 8 10 12 i r r m ( a ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 50 100 150 200 250 300 350 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 250 300 q r r ( n c ) i f = 100a v r = 34v t j = 25c t j = 125c -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 250a id = 1.0ma id = 1.0a
? irfs7434-7ppbf fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf d 2 pak-7pin package outline (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf d 2 pak-7pin part marking information d2pak-7pin tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014
? irfs7434-7ppbf qualification information ? ? qualification level ? industrial moisture sensitivity level d 2 pak-7pin msl1 rohs compliant yes ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comments 11/19/2014 ?? updated e as (l =1mh) = 880mj on page 2 ?? updated note 9 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 42a, v gs =10v?. on page 2 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 19, 2014

▲Up To Search▲

Price & Availability of IRFS7434-7PPBF-15

	To Download IRFS7434-7PPBF-15 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .